Analysis
Russie
Racine
Analysis
Russie
Repository
Accueil
Racine
Racine

Serveur d'exploration sur l'Indium

Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.

Muon dynamics at low temperatures in indium

Identifieur interne : 000462 ( Russie/Analysis ); précédent : 000461; suivant : 000463

Muon dynamics at low temperatures in indium

Auteurs : RBID : Pascal:04-0251981

Descripteurs français

English descriptors

Abstract

The lattice site and delocalization of implanted μ+ particles were investigated in highly perfect indium single crystals for temperatures 0.02+ at the Tl interstitial sites (1/4, 1/4, 1/4) (proposed earlier by Gygax et al., Hyperfine Interact. 64 (1990) 489) was unambiguously confirmed. The data for different field strengths allowed the determination of the inherent and μ+-induced electric field gradients at the relaxed nuclear positions. The lattice expansion about the μ+ was found to be 7%. Delocalization was observed for 32 < T < 52 K, the low values for both the attempt frequency 5 x 109 s-1 and activation energy Ea = 32.5 meV of hopping indicate under-barrier tunnelling diffusion in this temperature range. For 52 < T < 84 K the μ+ is again localized, the new μ+ site is characterized by a very low Gaussian relaxation rate σ0.08 μs-1 of the muon polarization.

Links toward previous steps (curation, corpus...)

Links to Exploration step

Pascal:04-0251981

Le document en format XML

<record>
<TEI>
<teiHeader>
<fileDesc>
<titleStmt>
<title xml:lang="en" level="a">Muon dynamics at low temperatures in indium</title>
<author>
<name sortKey="Solt, G" uniqKey="Solt G">G. Solt</name>
<affiliation wicri:level="1">
<inist:fA14 i1="01">
<s1>Department of Solid State Physics, Paul Scherrer Institut</s1>
<s2>PSI Villigen, 5232 Villigen</s2>
<s3>CHE</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Suisse</country>
<wicri:noRegion>PSI Villigen, 5232 Villigen</wicri:noRegion>
</affiliation>
</author>
<author>
<name sortKey="Egorov, V S" uniqKey="Egorov V">V. S. Egorov</name>
<affiliation wicri:level="1">
<inist:fA14 i1="02">
<s1>Russian Research Center "Kurchatov Institute"</s1>
<s2>Moscow 123182</s2>
<s3>RUS</s3>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>Russie</country>
<placeName>
<settlement type="city">Moscou</settlement>
<region>District fédéral central</region>
</placeName>
</affiliation>
</author>
<author>
<name sortKey="Baines, C" uniqKey="Baines C">C. Baines</name>
<affiliation wicri:level="1">
<inist:fA14 i1="01">
<s1>Department of Solid State Physics, Paul Scherrer Institut</s1>
<s2>PSI Villigen, 5232 Villigen</s2>
<s3>CHE</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Suisse</country>
<wicri:noRegion>PSI Villigen, 5232 Villigen</wicri:noRegion>
</affiliation>
</author>
<author>
<name sortKey="Herlach, D" uniqKey="Herlach D">D. Herlach</name>
<affiliation wicri:level="1">
<inist:fA14 i1="01">
<s1>Department of Solid State Physics, Paul Scherrer Institut</s1>
<s2>PSI Villigen, 5232 Villigen</s2>
<s3>CHE</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Suisse</country>
<wicri:noRegion>PSI Villigen, 5232 Villigen</wicri:noRegion>
</affiliation>
</author>
<author>
<name sortKey="Zimmermann, U" uniqKey="Zimmermann U">U. Zimmermann</name>
<affiliation wicri:level="1">
<inist:fA14 i1="01">
<s1>Department of Solid State Physics, Paul Scherrer Institut</s1>
<s2>PSI Villigen, 5232 Villigen</s2>
<s3>CHE</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Suisse</country>
<wicri:noRegion>PSI Villigen, 5232 Villigen</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt>
<idno type="inist">04-0251981</idno>
<date when="2004">2004</date>
<idno type="stanalyst">PASCAL 04-0251981 INIST</idno>
<idno type="RBID">Pascal:04-0251981</idno>
<idno type="wicri:Area/Main/Corpus">00B671</idno>
<idno type="wicri:Area/Main/Repository">00B080</idno>
<idno type="wicri:Area/Russie/Extraction">000462</idno>
</publicationStmt>
<seriesStmt>
<idno type="ISSN">0921-4526</idno>
<title level="j" type="abbreviated">Physica, B Condens. matter</title>
<title level="j" type="main">Physica. B, Condensed matter</title>
</seriesStmt>
</fileDesc>
<profileDesc>
<textClass>
<keywords scheme="KwdEn" xml:lang="en">
<term>Activation energy</term>
<term>Diffusion barriers</term>
<term>Electric field gradients</term>
<term>Impurities</term>
<term>Indium</term>
<term>Interstitials</term>
<term>Monocrystals</term>
<term>Muon spin relaxation</term>
<term>Perfect crystals</term>
<term>Polarization</term>
<term>Tunnel effect</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr">
<term>Interstitiel</term>
<term>Gradient champ électrique</term>
<term>Energie activation</term>
<term>Barrière diffusion</term>
<term>Effet tunnel</term>
<term>Relaxation spin muonique</term>
<term>Polarisation</term>
<term>Impureté</term>
<term>Indium</term>
<term>Cristal parfait</term>
<term>Monocristal</term>
<term>In</term>
<term>7675</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front>
<div type="abstract" xml:lang="en">The lattice site and delocalization of implanted μ
<sup>+</sup>
particles were investigated in highly perfect indium single crystals for temperatures 0.02<sup>+</sup>
at the Tl interstitial sites (1/4, 1/4, 1/4) (proposed earlier by Gygax et al., Hyperfine Interact. 64 (1990) 489) was unambiguously confirmed. The data for different field strengths allowed the determination of the inherent and μ
<sup>+</sup>
-induced electric field gradients at the relaxed nuclear positions. The lattice expansion about the μ
<sup>+</sup>
was found to be 7%. Delocalization was observed for 32 < T < 52 K, the low values for both the attempt frequency 5 x 10
<sup>9</sup>
s
<sup>-1</sup>
and activation energy E
<sub>a</sub>
= 32.5 meV of hopping indicate under-barrier tunnelling diffusion in this temperature range. For 52 < T < 84 K the μ
<sup>+</sup>
is again localized, the new μ
<sup>+</sup>
site is characterized by a very low Gaussian relaxation rate σ0.08 μs
<sup>-1</sup>
of the muon polarization.</div>
</front>
</TEI>
<inist>
<standard h6="B">
<pA>
<fA01 i1="01" i2="1">
<s0>0921-4526</s0>
</fA01>
<fA03 i2="1">
<s0>Physica, B Condens. matter</s0>
</fA03>
<fA05>
<s2>348</s2>
</fA05>
<fA06>
<s2>1-4</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG">
<s1>Muon dynamics at low temperatures in indium</s1>
</fA08>
<fA11 i1="01" i2="1">
<s1>SOLT (G.)</s1>
</fA11>
<fA11 i1="02" i2="1">
<s1>EGOROV (V. S.)</s1>
</fA11>
<fA11 i1="03" i2="1">
<s1>BAINES (C.)</s1>
</fA11>
<fA11 i1="04" i2="1">
<s1>HERLACH (D.)</s1>
</fA11>
<fA11 i1="05" i2="1">
<s1>ZIMMERMANN (U.)</s1>
</fA11>
<fA14 i1="01">
<s1>Department of Solid State Physics, Paul Scherrer Institut</s1>
<s2>PSI Villigen, 5232 Villigen</s2>
<s3>CHE</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</fA14>
<fA14 i1="02">
<s1>Russian Research Center "Kurchatov Institute"</s1>
<s2>Moscow 123182</s2>
<s3>RUS</s3>
<sZ>2 aut.</sZ>
</fA14>
<fA20>
<s1>280-284</s1>
</fA20>
<fA21>
<s1>2004</s1>
</fA21>
<fA23 i1="01">
<s0>ENG</s0>
</fA23>
<fA43 i1="01">
<s1>INIST</s1>
<s2>145B</s2>
<s5>354000117197550380</s5>
</fA43>
<fA44>
<s0>0000</s0>
<s1>© 2004 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45>
<s0>9 ref.</s0>
</fA45>
<fA47 i1="01" i2="1">
<s0>04-0251981</s0>
</fA47>
<fA60>
<s1>P</s1>
</fA60>
<fA61>
<s0>A</s0>
</fA61>
<fA64 i1="01" i2="1">
<s0>Physica. B, Condensed matter</s0>
</fA64>
<fA66 i1="01">
<s0>NLD</s0>
</fA66>
<fC01 i1="01" l="ENG">
<s0>The lattice site and delocalization of implanted μ
<sup>+</sup>
particles were investigated in highly perfect indium single crystals for temperatures 0.02<sup>+</sup>
at the Tl interstitial sites (1/4, 1/4, 1/4) (proposed earlier by Gygax et al., Hyperfine Interact. 64 (1990) 489) was unambiguously confirmed. The data for different field strengths allowed the determination of the inherent and μ
<sup>+</sup>
-induced electric field gradients at the relaxed nuclear positions. The lattice expansion about the μ
<sup>+</sup>
was found to be 7%. Delocalization was observed for 32 < T < 52 K, the low values for both the attempt frequency 5 x 10
<sup>9</sup>
s
<sup>-1</sup>
and activation energy E
<sub>a</sub>
= 32.5 meV of hopping indicate under-barrier tunnelling diffusion in this temperature range. For 52 < T < 84 K the μ
<sup>+</sup>
is again localized, the new μ
<sup>+</sup>
site is characterized by a very low Gaussian relaxation rate σ0.08 μs
<sup>-1</sup>
of the muon polarization.</s0>
</fC01>
<fC02 i1="01" i2="3">
<s0>001B70F75</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE">
<s0>Interstitiel</s0>
<s5>02</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG">
<s0>Interstitials</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE">
<s0>Gradient champ électrique</s0>
<s5>03</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG">
<s0>Electric field gradients</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE">
<s0>Energie activation</s0>
<s5>04</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG">
<s0>Activation energy</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE">
<s0>Barrière diffusion</s0>
<s5>05</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG">
<s0>Diffusion barriers</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE">
<s0>Effet tunnel</s0>
<s5>06</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG">
<s0>Tunnel effect</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE">
<s0>Relaxation spin muonique</s0>
<s5>07</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG">
<s0>Muon spin relaxation</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE">
<s0>Polarisation</s0>
<s5>08</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG">
<s0>Polarization</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE">
<s0>Impureté</s0>
<s5>09</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG">
<s0>Impurities</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE">
<s0>Indium</s0>
<s2>NC</s2>
<s5>15</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG">
<s0>Indium</s0>
<s2>NC</s2>
<s5>15</s5>
</fC03>
<fC03 i1="10" i2="X" l="FRE">
<s0>Cristal parfait</s0>
<s5>16</s5>
</fC03>
<fC03 i1="10" i2="X" l="ENG">
<s0>Perfect crystals</s0>
<s5>16</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA">
<s0>Cristal perfecto</s0>
<s5>16</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE">
<s0>Monocristal</s0>
<s5>17</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG">
<s0>Monocrystals</s0>
<s5>17</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE">
<s0>In</s0>
<s4>INC</s4>
<s5>52</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE">
<s0>7675</s0>
<s4>INC</s4>
<s5>56</s5>
</fC03>
<fN21>
<s1>159</s1>
</fN21>
<fN82>
<s1>OTO</s1>
</fN82>
</pA>
</standard>
</inist>
</record>

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Russie/Analysis

HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 000462 | SxmlIndent | more

Ou

HfdSelect -h $EXPLOR_AREA/Data/Russie/Analysis/biblio.hfd -nk 000462 | SxmlIndent | more

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Russie
   |étape=   Analysis
   |type=    RBID
   |clé=     Pascal:04-0251981
   |texte=   Muon dynamics at low temperatures in indium
}}
Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024